Design and development of lithography lens in 0.7 μm i-line projection exposure system
摘要:
The main specifications of lithography lens, solved key unit techniques in design and the development results of 0.7μm i line projection system, which is a special key micro electronic equipment, are reviewed. The results show that 5 × reduction projection lens with numeral aperture NA=0.42, field size 14.6mm×14.6mm and distortion less than ±0.1μm have been fabricated successfully. The bitelecentric lens, control and compensation of temperature and atmosphere pressure, high resolution imagery and dark field TTL alignment in the system are also described.
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年份:
1998
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