GaN PN junction issues and developments

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摘要：

Critical nitride-based p- n junction issues relating to wide bandgap bipolar device performance include minority carrier lifetime, defect related current characteristics and ohmic contact properties. Recent developments in p-GaN deposition processes resulted in GaN p- i- n UV photodetectors with improved deep UV responsivity, visible light rejection and shunt resistance characteristics. From the device data, the electron diffusion length in p-GaN doped at 1·10 18 cm 3 was estimated to be 790 , and the minority carrier lifetime in the p-GaN was estimated to be 24 ps to 0.24ns. Improved junction electrical characteristics were achieved using MBE deposition on GaN buffers grown by MOCVD. NiAu ohmic contacts were also made to p-GaN with specific contact resistances less than 10 4 Ω·cm 2.

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关键词：

Practical, Experimental/ carrier lifetime gallium compounds III-V semiconductors minority carriers ohmic contacts p-i-n photodiodes p-n junctions ultraviolet detectors wide band gap semiconductors/ GaN PN junction p-n junction wide bandgap bipolar device performance minority carrier lifetime defect related current characteristics ohmic contact properties deposition processes p-i-n UV photodetectors deep UV responsivity visible light rejection shunt resistance characteristics electron diffusion length junction electrical characteristics MBE deposition GaN buffers MOCVD NiAu ohmic contacts contact resistances GaN NiAu/ A7340L Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions A0762 Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection) A7340N Electrical properties of metal-nonmetal contacts A7220J Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators