Lamellar devices processed by thermomigration

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摘要：

Lamellar structures consisting of alternatep‐ andn‐type silicon layers were fabricated by migrating molten aluminum‐rich wires throughn‐type silicon wafers in a thermal gradient. The recrystallized material deposited behind the molten wires wasptype. An aluminum‐dopant concentration profile was calculated which was consistent with the measured electrical characteristics of the lamellar structures. Lamellar devices made from these structures can be used as vertical multijunction solar cells, high‐voltage diodes, surge protectors, and negative‐incremental resistors.

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关键词：

aluminium bipolar transistors diffusion in solids elemental semiconductors p-n homojunctions semiconductor diodes semiconductor doping silicon solar cells surge protection/ thermomigration electrical characteristics surge protectors multijunction solar cells high voltage diodes negative resistance elements lamellar devices parallel molten Al rich wires n-Si wafers Al concentration profiles alternate p-n layers/ A6170T Doping and implantation of impurities A6630J Diffusion, migration, and displacement of impurities in solids A7340L Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions A8630J Photoelectric conversion solar cells and arrays B2520C Elemental semiconductors B2530B Semiconductor junctions B2550B Semiconductor doping B2560J Bipolar transistors B8420 Solar cells and arrays