摘要：

High accuracy of an experimental investigation of noise features of semiconductor devices and materials in low frequency region is very important for reaching deep understanding of noise features It will enable precise extracting of essential noise parameters and modelling noise behaviour of real devices.In this paper measurement accuracy of 1/f and GR noise in semiconductor devices, as well as data processing for parameter extraction will be discussed. Theory of random process parameter estimation gives us a basis for evaluation of measurement errors. General analysis of statistical accuracy of noise measurement is made. From this analysis practical recommendations and formulas for accuracy evaluation are derived. Differences in 1/f and GR noise characteristics must be taken into account in measurement. Choice of the most appropriate measurement conditions for particular kind of noise is discussed. Another source of measurement error could be contribution of other interfering signal sources. As a rule 1/f and GR noise are present simultaneously and a task is to evaluate their parameters separately. In the measurement and data processing process discrimination of particular noise sources and subtraction of other background noise sources must be provided.

展开