Effects of barrier height (Θ B) and the nature of Bi-layer structure on the reliability of high-k dielectrics with dual metal gate (Ru & Ru-Ta alloy) technology
摘要：
breakdown). Soft breakdown characteristics were dependent on the barrier heights. The bi-modal defect generations are believed to be resulted from the breakdown in interface and bulk layer.
展开
关键词：
CMOS integrated circuits DRAM chips dielectric thin films electric breakdown hafnium compounds integrated circuit reliability permittivity ruthenium ruthenium alloys semiconductor-insulator boundaries
会议名称：
Symposium on Vlsi Technology
会议时间：
15-17 June 2004
主办单位：
IEEE
被引量：
IEEEXplore
(全网免费下载)
通过文献互助平台发起求助，成功后即可免费获取论文全文。
相似文献
参考文献
引证文献
辅助模式
引用
文献可以批量引用啦~
欢迎点我试用！
