摘要：

1,194,225. Tetraboron silicide. DOW CORNING CORP. 8 June, 1967 [8 July, 1966], No. 26471/67. Heading C1A. Tetraboron silicide (B 4 Si) is made by placing within a reaction chamber materials chosen from the following (A) Silicon and a member chosen from (i) boron trichloride and hydrogen or (ii) a boron hydride and hydrogen or (B) Boron and a member chosen from the group of compounds SiX 4 , where each X is chlorine, bromine, hydrogen or a methyl or ethyl group, in a hydrogen carrier and heating the materials in said reaction chamber to a temperature of from 1000 to 1200 C. Boron or silicon objects of small cross-section or thin coatings of boron or silicon or other materials may be completely converted to tetraboron silicide. The preferred boron hydride is diborane (B 2 H 6 ) and the preferred silicon compound SiHCl 3 . Diborane is preferably used as a 1: 15 by volume mixture with hydrogen. Examples of the process are given using silicon as a thin rod or a coating or graphite with BCl 3 , silicon with B 2 H 6 and boron, as a thin rod, with SiHCl 3 .

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