摘要：

PURPOSE:To obtain the field-effect transistor with improvement in lowering parasitic inductance without reducing its yield rate and working efficiency by a method wherein a source electrode is connected to the metal on the back of chips through the intermediary of a metal coated on the side face of a transistor chip. CONSTITUTION:After a semiconductor substrate 23, including a supporting member 24, has been formed into a chip by performing an etching with an etching solution using a photoresist film 26 as a mask, the photoresist film is peeled off. Then, a patterning is performed on the chip 27 located on the supporting member 24 using photolithographic method, and Ni is coated on the region which is not covered by the photoresist film 28 by providing non-electrolitic plating on each chip 27 which was obtained in such a manner that the unmetalized region alone is covered by the photoresist film 28. A source electrode 20 and a semiconductor element backside electrode 29 are electrically connected through the intermediary of a chip sideface metal Ni, and a side face metalized element is completed. The final shape of the titled transistor is obtained by peeling the photoresist film 28 off the chip and dipping the above into an organic solution with which the Apiezon wax 25 adhering the supporting member 24 and the chip 27 is dissolved.

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