摘要：

Two photopatternable high-k organic–inorganic (O–I) hybrid sol–gel materials, UVUT(AUP1450), and UVUT(P-AUP1450), were successfully synthesized and used as gate dielectrics for organic thin film transistors (OTFTs) and other derivative electronic devices. Urethane acrylate functional groups were introduced into the organic/inorganic precursor and activated as photocuring groups to create a strong organic network. Therefore, the thin films exhibited highly smooth and pinhole-free surfaces. In addition, the k values of both films were higher than 12, and good insulation characteristics were observed in both cases. Practical unit OTFTs with these hybrid-material-based gate dielectrics and organic semiconductors (N-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and 2,9-di-decyl-dinaphtho-[2,3-b:2,3-f]-thieno-[3,2-b]-thiophene) exhibit electrically stable operation under low-voltage operating conditions (less than 5 V). Moreover, various types of integrated devices, including complementary NOT, NAND, and NOR gates, were manufactured using unit OTFTs with UVUT(AUP1450) and UVUT(P-AUP1450) gate dielectrics and exhibit excellent operating behavior under low-voltage conditions with negligible hysteresis. Consequently, the new synthesized hybrid photopatternable O–I hybrid material is amenable to facile methods of solution processing and has potential for the realization of low-voltage operation organic electronics.

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