ETCHING HIGH-K MATERIALS

阅读量:

99

申请(专利)号:

US20080254652

申请日期:

2008-10-20

公开/公告号:

US2010099264A1

公开/公告日期:

2010-04-22

申请(专利权)人:

KAI-ERIK ELERS

发明人:

KE Elers

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国省代号:

FI

摘要:

A dry etch method, apparatus, and system for etching a high-k material comprises sequentially contacting the high-k material with a vapor phase reducing agent, and a volatilizing etchant in a cyclical process. In some preferred embodiments, the reducing agent and/or volatilizing etchant is plasma activated. Control over etch rate and/or selectivity are improved by the pulsed process, where, in some embodiments, each step in the cyclical process has a self-limited extent of etching. Embodiments of the method are useful in the fabrication of integrated devices, as well as for cleaning process chambers.

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