ETCHING HIGH-K MATERIALS
申请(专利)号：
US20080254652
申请日期：
2008-10-20
公开/公告号：
US2010099264A1
公开/公告日期：
2010-04-22
申请(专利权)人：
KAI-ERIK ELERS
国省代号：
FI
摘要：
A dry etch method, apparatus, and system for etching a high-k material comprises sequentially contacting the high-k material with a vapor phase reducing agent, and a volatilizing etchant in a cyclical process. In some preferred embodiments, the reducing agent and/or volatilizing etchant is plasma activated. Control over etch rate and/or selectivity are improved by the pulsed process, where, in some embodiments, each step in the cyclical process has a self-limited extent of etching. Embodiments of the method are useful in the fabrication of integrated devices, as well as for cleaning process chambers.
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