Comparison of infrared frequency selective surfaces fabricated by direct-write electron-beam and bilayer nanoimprint lithographies
摘要:
We report on the fabrication of crossed-dipole resonant filters by direct-write electron-beam and nanoimprint lithographies. Such structures have been used as spectrally selective components at visible, microwave, and infrared wavelengths. Imprinting is accomplished in a modified commercial hot press at 155°C. The replica is then etched in oxygen plasma and developed in chlorobenzene to selectively dissolve the poly(methylmethacrylate and methacrylic acid) and poly(methylmethacrylate) bilayer resist. This step enhances undercut and improves lift-off metalization. Infrared fourier transform spectroscopy was performed to characterize the transmission response of the frequency selective surfaces (FSSs) fabricated. The resonant behavior for the direct-write FSS was found to be 5.3 μm and for the nanoimprinted FSS to be 6 μm. The shift towards longer wavelengths is consistent with the dimensions obtained for the FSSs elements in both cases.
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关键词:
Experimental/ electron beam lithography frequency selective surfaces nanotechnology resonator filters/ infrared frequency selective surface fabrication direct write electron beam lithography nanoimprint lithography crossed dipole resonant filter bilayer resist hot pressing poly(methylmethacrylate) plasma etching P(MMA-MAA) lift-off metallization Fourier transform infrared spectroscopy chlorobenzene development undercut transmission response 155 C/ B1320 Waveguide and stripline components B2550G Lithography (semiconductor technology) B2550N Nanometre-scale semiconductor fabrication technology/ temperature 4.28E+02 K
DOI:
10.1116/1.1319838
被引量:
年份:
2000
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