摘要：

We describe highly reliable operation of a novel planar inner stripe blue-violet laser diode (BV-LD). A planar regrowth technique makes it possible to simultaneously fabricate a low-resistive superlattice (SL) structure both on the current-injecting narrow stripe area and on the AlN current-blocking layer. This allows for low operating voltage and over 1000 h stable operation at a single-mode output power of 200 mW at 80℃. The results obtained here clearly indicate that this inner stripe laser structure is a desirable candidate for a reliable high-power light source for the next generation of optical disc systems.

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