Fabrication and Photoluminescence of Hierarchical SiC Nanowires
摘要：
Hierarchical single-crystalline -SiC nanowires were synthesized by simply heating carbonaceous silica xerogel. A fairly high density of stacking faults was observed perpendicular to [111] growth direction of the hierarchical nanowires. A possible vapor-solid growth mechanism for the hierarchical nanowires was discussed. The photoluminescence spectrum of hierarchical SiC nanowires at room temperature shows two emission peaks at 406 nm and 432 nm. The blue emission at 432 nm may be related to 3C-SiC, while the emission peak at 406 nm may be attributed to 6H-SiC segments formed by stacking faults in 3C-SiC nanowire matrix.
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关键词：
Silicon carbide nanowirephotoluminescence microstructure electron microscopy hierarchical nanowire stacking fault
DOI：
10.2174/157341312800167560
被引量：
年份：
2012
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