An interconnected 2D-TM EBG structure for millimeter and submillimeter waves
摘要：
Due to their unique properties, electromagnetic bandgap (EBG) materials are of high interest for applications in communication technology for many frequency bands from microwave up to optical frequencies. We have investigated in both simulation and experiment a two dimensionally periodic EBG structure made by reactive ion etching of silicon with a bandgap for transverse magnetic waves in the millimeter wave range around 100 GHz. The structure comprises both a large bandgap and a high mechanical stability due to interconnecting dielectric bridges.
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关键词：
Theoretical or Mathematical, Experimental/ millimetre waves numerical analysis optical communication optical materials photonic band gap photonic crystals silicon sputter etching submillimetre waves/ interconnected 2D-TM structure millimeter waves submillimeter waves periodic electromagnetic bandgap materials communication technology reactive ion etching transverse magnetic waves mechanical stability interconnecting dielectric bridges silicon etching terahertz waves Si/ A4270Q Photonic bandgap materials A4230Q Optical communication A0260 Numerical approximation and analysis B4110 Optical materials B6260 Optical communication B0290Z Other numerical methods/ Si/el
DOI：
10.1109/JSAC.2005.851179
被引量：
年份：
2006
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