Method for depositing and patterning thin films formed by fusing nanocrystalline precursors
申请(专利)号:
US19940217161
申请日期:
1994-03-24
公开/公告号:
US5559057A
公开/公告日期:
1996-09-24
申请(专利权)人:
STARFIRE ELECTGRONIC DEVELOPMENT & MARKETING LTD.
被引量:
摘要:
Patterns or circuits of semiconductors or metals are produced with dimensions at least as small as 7 nm using nanocrystalline precursors. The substrate is masked with an electron beam sensitive layer and a pattern is traced using a focused electron beam. Exposure to a source of nanocrystalline material and dissolution of the mask material produces patterned features of nanocrystals. The sample may then be heated to form a bulk thin film or left unheated, preserving the electronic properties of the isolated particles. The process is repeatable with different materials to build laminar structures of metals, semiconductors and insulators.
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