Method for depositing and patterning thin films formed by fusing nanocrystalline precursors

阅读量:

14

申请(专利)号:

US19940217161

申请日期:

1994-03-24

公开/公告号:

US5559057A

公开/公告日期:

1996-09-24

申请(专利权)人:

STARFIRE ELECTGRONIC DEVELOPMENT & MARKETING LTD.

发明人:

AN Goldstein

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被引量:

157

摘要:

Patterns or circuits of semiconductors or metals are produced with dimensions at least as small as 7 nm using nanocrystalline precursors. The substrate is masked with an electron beam sensitive layer and a pattern is traced using a focused electron beam. Exposure to a source of nanocrystalline material and dissolution of the mask material produces patterned features of nanocrystals. The sample may then be heated to form a bulk thin film or left unheated, preserving the electronic properties of the isolated particles. The process is repeatable with different materials to build laminar structures of metals, semiconductors and insulators.

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