摘要：

Copper selenide (Cu3Se2) thin films have been synthesized with Se as the precursor in aqueous solution by chemical bath deposition technique at room temperature.We have investigated the influence of the growth time ranging from 30 to 90 min on structural,optical and electrical properties of Cu3Se2 thin films.The as-grown film at 60 min exhibits a tetragonal structure and is (101) oriented.The maximum value of crystal size D =55 nm is attained for Cu3Se2 films grown at 60 min.The Raman spectrum reveals a pronounced peak at 259 cm-1,which is assigned to vibrational (stretching) modes from the covalent Se-Se bonds.The optical band gap energy is 1.91 to 2.01 eV with growth time increased from 30 to 90 min.The scanning electron microscopy (SEM) study reveals that the grains are uniform and spread over the entire surface of the substrate of the film at 60 min.The Hall effect study reveals that the film exhibits p-type conductivity.The synthesized film showed good absorbance in the visible region which signifies that synthesized Cu3Se2 films can be suitable as a sensitized material in semiconductor sensitized solar cells.

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