Four‐wave polarization spectroscopy of small‐gap semiconductors: Application to free carrier concentration measurements in gallium arsenide using a tunable infrared source
摘要：
We present a generalization of the polarization coherent anti‐Stokes Raman spectroscopy to zinc‐blende structure semiconductors. Competitive third‐order processes have been put in evidence by studying the resonant signal around the LO phonon at 292 cm1in GaAs. Our analysis enables us to compare directly Raman and free‐carrier contributions whose concentration can be thus measured by a purely optical method.
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关键词：
Carrier Density (Solid State Gallium Arsenides Infrared Lasers Optical Polarization Raman Spectroscopy Semiconductor Devices Dye Lasers Nonlinear Optics Tunable Lasers Zinc Compounds
DOI：
10.1063/1.92127
被引量：
年份：
1981
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