Electronic Raman scattering from acceptors and correlation with transport properties in Li‐doped ZnSe layers

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作者：

DJ Olego，T Marshall，D Cammack，K Shahzad，J Petruzzello

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摘要：

Electronic Raman scattering (ERS) from holes bound to Li acceptors was studied in ZnSe layers and correlated with the net acceptor concentrationNANDdetermined by capacitance versus voltage measurements. The layers were grown by molecular beam epitaxy on GaAs substrates and were dopedinsitutoNANDconcentrations ranging from high 1015's to low 1017's cm3. The ERS spectra reveal several transitions between the ground 1Sand shallowerSandPbound states of the Li acceptors as well as transitions to a continuum of delocalized valence‐band states. Values of excitation energies for the bound hydrogenic states and the ionization energy of the acceptors were measured. The strength of the ERS signal normalized to the phonon scattering depends linearly onNAND. This relationship can be exploited in contactless characterization ofp‐type ZnSe.

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关键词：

7830Fs 7865Fa CV CHARACTERISTIC LITHIUM ADDITIONS MOLECULAR BEAM EPITAXY RAMAN SPECTRA ZINC SELENIDES

DOI：

10.1063/1.104798

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年份：

1991