Structure investigations on single-crystal gold films
摘要：
Structure of epitaxially grown gold films of varying thickness (10-1000 Aring) has been investigated using LEED, AES, resistivity measurements and X-ray diffraction analysis. Silicon 111-oriented crystals, which are prehandled to exhibit radic3timesradic3 R30deg-superstructure in the LEED pattern, serve as substrates. The gold films show a homogeneous structure with smooth surfaces and a marked (111)-orientation. The use of silicon substrates, however, is complicated by the fact, that silicon diffuses through the gold films to a small extent even at room temperature
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关键词：
Experimental/ Auger effect electronic conduction in metallic thin films gold low energy electron diffraction metallic epitaxial layers X-ray diffraction examination of materials/ epitaxially grown LEED AES resistivity X-ray diffraction analysis superstructure structure Au films Si substrates/ A6855 Thin film growth, structure, and epitaxy
DOI：
10.1007/bf00882888
被引量：
年份：
1977
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