Electron spin resonance studies on buried oxide silicon‐on‐insulator
摘要：
Electron spin resonance is used to study defects in high‐dose oxygen‐ion implanted Si substrates. By this implantation, a crystalline Si/buried SiO2/crystalline Si structure is created. Two kinds of defect centers are found; one is assigned to the amorphous center, and the other, thePb0center, which has been observed at thermally grown SiO2/(111) Si interfaces. The observedPb0center appears to exist near precipitated SiO2/crystalline Si interfaces, rather than crystalline Si/buried SiO2interfaces. When annealed at 1150°C, spin density decreases due to oxygen outdiffusion from the crystalline Si.
展开
关键词：
Buried interfaces Crystal defects Electron paramagnetic resonance spectroscopy Amorphous semiconductors Annealing
DOI：
10.1063/1.98221
被引量：
年份：
1987
相似文献
参考文献
引证文献
辅助模式
引用
文献可以批量引用啦~
欢迎点我试用！
