Article comprising a thick garnet film with negative growth-induced anisotropy
申请(专利)号:
US20040986985
申请日期:
2004-11-15
公开/公告号:
US2009053558A1
公开/公告日期:
2009-02-26
申请(专利权)人:
ROBERT R. ABBOTT;VINCENT J. FRATELLO;STEVEN JOY LICHT;IRINA MNUSHKINA
被引量:
摘要:
A thick film bismuth doped rare earth iron garnet greater than 50 μm in thickness with a growth-induced uniaxial anisotropy less than zero, such that all the magnetic domains in the film have their magnetization vectors in the plane of the film. A preferred embodiment comprises a film of composition BiGdLuFeGaO. Films with such anisotropy solve the problem of devices and sensors that require a continuously varying Faraday rotation without the effective insertion losses that are inherent to discrete perpendicular domains. A similar effect can be achieved with a film of perpendicular domains by launching the light in the plane of the thick film in a non-waveguiding mode as opposed to the conventional perpendicular direction.
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