Low dielectric constant materials for microelectronics
摘要:
The ever increasing requirements for electrical performance of on-chip wiring has driven three major technological advances in recent years. First, copper has replaced Aluminum as the new interconnect metal of choice, forcing also the introduction of damascene processing. Second, alternatives forSiO2with a lower dielectric constant are being developed and introduced in main stream processing. The many new resulting materials needs to be classified in terms of their materials characteristics, evaluated in terms of their properties, and tested for process compatibility. Third, in an attempt to lower the dielectric constant even more, porosity is being introduced into these new materials. The study of processes such as plasma interactions and swelling in liquid media now becomes critical. Furthermore, pore sealing and the deposition of a thin continuous copper diffusion barrier on a porous dielectric are of prime importance. This review is an attempt to give an overview of the classification, the characteristics and properties of low-kdielectrics. In addition it addresses some of the needs for improved metrology for determining pore sizes, size distributions, structure, and mechanical properties.
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关键词:
Bibliography, General or Review, Practical/ dielectric thin films diffusion barriers integrated circuit interconnections mechanical properties permittivity porosity porous materials reviews swelling/ low dielectric constant materials microelectronics electrical performance on-chip wiring copper interconnect metal damascene processing SiO 2 alternatives materials characteristics process compatibility porosity plasma interactions swelling pore sealing thin continuous copper diffusion barrier porous dielectric pore sizes pore size distributions mechanical properties/ B2550F Metallisation and interconnection technology B2810 Dielectric materials and properties B0580 Powders and porous materials (engineering materials science)
DOI:
10.1063/1.1567460
被引量:
年份:
2003
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