Removing fluorine-based plasma etch residues
申请(专利)号:
US20020278535
申请日期:
2002-10-23
公开/公告号:
US2004079388A1
公开/公告日期:
2004-04-29
申请(专利权)人:
RAMACHANDRARAO VIJAYAKUMAR S.;CLARK SHAN C.;BRASK JUSTIN K.;TURKOT ROBERT B.
被引量:
摘要:
Supercritical carbon dioxide may be utilized to remove fluorine-based etch residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The supercritical carbon dioxide may have dissolved in it various reagents and fluorocarbon materials that, together, cause the residue to swell and to be exposed for reactions with the reagents, the supercritical carbon dioxide, and the fluorocarbons. As a result, relatively hard to penetrate fluorine-based residues may be entered and removed using aggressive chemistries.
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