Removing fluorine-based plasma etch residues

阅读量:

45

申请(专利)号:

US20020278535

申请日期:

2002-10-23

公开/公告号:

US2004079388A1

公开/公告日期:

2004-04-29

申请(专利权)人:

RAMACHANDRARAO VIJAYAKUMAR S.;CLARK SHAN C.;BRASK JUSTIN K.;TURKOT ROBERT B.

发明人:

VS RamachandraraoCC ShanJK BraskRobert B. Turkot

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被引量:

595

摘要:

Supercritical carbon dioxide may be utilized to remove fluorine-based etch residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The supercritical carbon dioxide may have dissolved in it various reagents and fluorocarbon materials that, together, cause the residue to swell and to be exposed for reactions with the reagents, the supercritical carbon dioxide, and the fluorocarbons. As a result, relatively hard to penetrate fluorine-based residues may be entered and removed using aggressive chemistries.

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