Deposition of highly-oriented PTFE films and uses therefor

阅读量:

19

申请(专利)号:

CA19922060362

申请日期:

1992-01-30

公开/公告号:

CA2060362A1

公开/公告日期:

1993-07-31

申请(专利权)人:

REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人:

P SmithJC Wittmann

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被引量:

81

摘要:

Broadly the invention is a method for forming a highly- oriented crystal structure on a substrate in a known orientation comprising the steps of forming a film of highly-oriented poly(tetrafluoroethylene) with an orientation angle of less than 20° on a surface of the substrate with its nominal orientation director along a desired orientation director and then depositing a crystal-forming material on the highly-oriented poly(tetrafluoroethylene) to form the structure. Specific examples include a method for growing a highly- oriented crystal on filament substrates, a method for producing extruded polymer articles (fibers, tapes, and solids) containing oriented crystal growth to improve the characteristics thereof, and a method for storing and retrieving data.

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