Photo-patternable fluorinated polyhedral oligomeric silsequioxane-functionalized (POSS-F) polymeric materials with ultra low dielectric constants
摘要：
Polyhedral oligomeric silsesquioxane (POSS) based materials hold great promise for developing a photopatternable low- k material which eliminates the need for sacrificial layers when patterning low- k dielectric films. In this work we demonstrate that organic materials based on partially fluorinated, polyhedral oligomeric silsesquioxane (POSS) functionalized (meth)acrylates (POSS-F) containing appropriate amounts of the photoacid generator (PAG), triphenylsulfonium perfluorooctylsulfonate (TPS-PFOS), in order to achieve positive tone imaging, present ultra low k - values (lower than 2.0) which further decrease when the amount of the photoacid generator increases due to the large percentage of C–F bonds in the selected PAG. A concentration of about 5% w/w of the photo-acid generator was found to be optimal in order to obtain both acceptable photolithographic behaviour and ultra low- k properties.
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DOI：
10.1016/j.matchemphys.2012.05.073
被引量：
年份：
2012
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