Thermomigration of molten Ga in Si and GaAs

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摘要：

Molten zones of Ga have been migrated through Si and GaAs in thermal gradients between 6 and 92°C/cm and over a temperature range between 300 and 1000°C. The observed migration rate is larger in Si than GaAs. In both cases the droplets are faceted on (111) planes. An expression for the migration rateVis derived in terms of the solid's heat of fusion and its solubility in the liquid. For large liquid zones, the calculated rate agrees with experiments for Ga-Si, Al-Si, and Au-Si systems. In contrast, the observed rate for the Ga-GaAs system is lower than calculated because of interface kinetics. In all systems, small liquid zones migrate slower than large liquid zones. Migration rates are also calculated for the Ag-Si, Sn-Si, Sb-Si, and In-Si systems. The general criteria for applying thermomigration in various metal-semiconductor systems are discussed.

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关键词：

Experimental/ diffusion in solids elemental semiconductors gallium gallium arsenide III-V semiconductors self-diffusion in solids semiconductor doping silicon/ droplet migration thermomigration of molten Ga in Si thermomigration of molten Ga in GaAs 300 to 1000 degrees C/ A6170T Doping and implantation of impurities A6630H Self-diffusion and ionic conduction in solid nonmetals A6630J Diffusion, migration, and displacement of impurities in solids B2520C Elemental semiconductors B2520D II-VI and III-V semiconductors B2550B Semiconductor doping