The growth and properties of epitaxial layers of zinc sulphide on germanium
摘要：
Vacuum deposition of epitaxial films of zinc sulphide onto (111) 0.1 Ω cm p type germanium substrates is described. The films contain stacking faults similar to those observed in epitaxial thin films of other substances and possess similar electrical characteristics to bulk crystals. Activation studies show that a.c. electroluminescence may be obtained by an embedding process. The zinc sulphide/germanium heterojunctions fabricated by the methods described are not efficient radiation detectors.
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关键词：
Experimental/ electroluminescence epitaxial growth luminescence of inorganic solids optical films thick films thin films zinc compounds/ growth epitaxial layers, zinc sulphide on Ge vacuum deposition stacking faults electrical characteristics activation studies AC electroluminescence embedding process radiation detectors zinc sulphide/germanium heterojunctions wavelength convertor/ A7360 Electrical properties of thin films and low-dimensional structures A7860F Electroluminescence (condensed matter)
DOI：
10.1007/BF00553891
被引量：
年份：
1970
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