摘要：

Disclosed is a light-emitting device (10) comprising a light-emitting layer (3), and a pair of electrodes (2, 4) for injecting current into the light-emitting layer (3). The light-emitting layer (3) contains a GaN semiconductor particle (7). The GaN semiconductor particle (7) is doped with at least one element (A) selected from group 16 elements and group 14 elements, and at lest one element (B) selected from group 12 elements and group 2 elements. The light-emitting device (10) is capable of emitting light having, for example, a wavelength within the range of 400-650 nm.

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