摘要：

GaObelongs to the group of transparent conducting oxides (TCOs) with a wide band gap and electrical conductivity. It exhibits the largest band gap with E= 4.8 eV and thus a unique transparency from the visible into the UV region. The information on the electronic structure of β-GaOis very scarce. This is in part due to the challenging problem of growing high purity single crystals. Transparent semiconducting β-GaOsingle crystals were grown by the Czochralski method from an iridium crucible under a dynamic protective atmosphere to control partial pressures of volatile species of GaO. The investigated samples were characterized by different techniques (LEED, Laue, and STM). The experimental valence band structure of the of β-GaOsingle crystals along Γ-Z and A-M symmetry directions of the (100)-surface of Brillouin zone was determined by high-resolution angle-resolved photoelectron spectroscopy (ARPES) utilizing synchrotron radiation. The experimental band structure is compared and discussed with the theoretical calculations. The effect of changing the temperature from 300 K to 20 K on the experimental band structure β-GaOwas studied.

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