Two-dimensional infrared photonic gap structure based on porous silicon
摘要：
We have fabricated a two‐dimensional photonic band structure based on macroporous silicon with individual gaps for both polarizations in the infrared region between 250 and 500 cm1(20–40 μm). A square lattice of circular air rods with a lattice constant of 8 μm was etched 340 μm deep in ann‐type silicon substrate by electrochemical pore formation in hydrofluoric acid. The transmission spectra between 50 and 650 cm1were in good agreement with the theoretical calculated structure. The pore formation technique should allow the fabrication of photonic lattices with a complete two‐dimensional band gap in the middle and near infrared.
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关键词：
4225-p 4282Cr ENERGY GAP FABRICATION INFRARED RADIATION OPTICS POROUS MATERIALS SILICON SQUARE LATTICES TWO-DIMENSIONAL SYSTEMS
DOI：
10.1063/1.113395
被引量：
年份：
1995
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