Complex oxide, and production process therefor and applications thereof
申请(专利)号:
US10717483
申请日期:
20031121
公开/公告号:
US07186393B2
公开/公告日期:
20070306
申请(专利权)人:
Hisao Kogoi Jun Tanaka Hiroyuki Hagihara
国省代号:
JP,JP,JP
被引量:
摘要:
The present invention relates to a complex oxide having a BET specific surface area of about 10 to about 200 m/g, comprising zinc oxide as a primary component, containing crystalline structures of both zinc oxide and silica, and exhibiting diffraction peaks in lattice planes (), (), and (), which are X-ray crystallographically specific to diffraction peaks of crystalline zinc oxide, and in a lattice plane () which is X-ray crystallographically specific to the diffraction peak of crystalline silica.
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