Pulsed plasma deposition from 1,1,2,2-tetrafluoroethane by electron cyclotron resonance and conventional plasma enhanced chemical vapor deposition

来自 EBSCO

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摘要：

Pulsed electron cyclotron resonance (ECR) plasmas from 1,1,2,2-C2H2F4 are used to deposit fluorocarbon films. The deposited films have a F : C ratio of 1, with only slight variations in % CFx as the deposition pressure is decreased. The optical emission (OES) spectra of the pulsed C2H2F4 plasmas show high intensity peaks for H, C2, and C3, with lower intensity CF2 and F peaks. The dominant OES peak shifts from Hα to C2 when the pressure is reduced, most likely a result of the increased electron temperature at the lower pressure. Gas-phase recombination reactions may be occurring between the OES sampling region and the deposition substrate ( 8-in. distance), producing fluorocarbon molecular deposition species, thus accounting for the high degree of fluorination in the deposited films. Parallel plate plasma deposited films from C2H

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关键词：

electron cyclotron resonance optical emission spectroscopy plasma deposition fluorocarbon C2H2F4

DOI：

10.1002/app.1308

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年份：

2001