Nanometer-Thick Gold on Silicon as a Proxy for Single-Crystal Gold for the Electrodeposition of Epitaxial Cuprous Oxide Thin Films

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作者：

JA Switzer，JC Hill，NK Mahenderkar，YC Liu

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摘要：

Single-crystal Au is an excellent substrate for electrochemical epitaxial growth due to its chemical inertness, but the high cost of bulk Au single crystals prohibits their use in practical applications. Here, we show that ultrathin epitaxial films of Au electrodeposited onto Si(111), Si(100), and Si(110) wafers can serve as an inexpensive proxy for bulk single-crystal Au for the deposition of epitaxial films of cuprous oxide (Cu2O). The Au films range in thickness from 7.7 nm for a film deposited for 5 min to 28.3 nm for a film deposited for 30 min. The film thicknesses are measured by low-angle X-ray reflectivity and X-ray Laue oscillations. High-resolution TEM shows that there is not an interfacial SiOx layer between the Si and Au. The Au films deposited on the Si(111) substrates are smoother and have lower mosaic spread than those deposited onto Si(100) and Si(110). The mosaic spread of the Au(111) layer on Si(111) is only 0.15° for a 28.3 nm thick film. Au films deposited onto degenerate Si(111) exhi...

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关键词：

coincident site lattice silicon cuprous oxide gold thin films epitaxy electrodeposition

DOI：

10.1021/acsami.6b04552

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年份：

2016