Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors
摘要：
We present a code for the quantum simulation of ballistic metal-oxide-semiconductor field effect transistors (MOSFETs) in two dimensions, which has been applied to the simulation of a so-called "well-tempered" MOSFET with channel length of 25 nm. Electron confinement at theSi/SiO2interface and effective mass anisotropy are properly taken into account. In the assumption of negligible phonon scattering in nanoscale devices, transport is assumed to be purely ballistic. We show that our code can provide the relevant direct-current characteristics of the device by running on a simple high-end personal computer, and can be a useful tool for the extraction of physics-based compact models of nanoscale MOSFETs.
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关键词：
MOSFETs Ballistic transport Ballistics Field effect transistors Metal insulator semiconductor structures
DOI：
10.1063/1.1519349
被引量：
年份：
2002
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