Chemical vapor deposition of diamond growth using a chemical precursor
摘要：
A nucleation method to form diamond on chemically pretreated silicon (111) surfaces is reported. The nucleation consisted of binding covalently 2,2-divinyladamantane molecules on the silicon substrate. Subsequently, low pressure diamond growth was performed via microwave plasma chemical vapor deposition in a tubular deposition system. The resulting diamond layers presented a good crystallinity and the Raman spectra showed a very sharp peak at1331cm1.
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DOI：
10.1063/1.122081
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年份：
1998
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