摘要：

An ultra high vacuum epitaxy system is described, including special features such as computer control. The system is capable of preparing sophisticated structures requiring a high degree of precise control. GaAlAs films have been grown and evaluated by various techniques; He-ion backscattering and Raman spectroscopy have been shown to be particularly valuable for periodic structures. A structure with a very narrow period has been made, and its transport properties measured and interpreted by the superlattice mechanism.

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