Orienting crystalline materials and single crystals, information storage, improved properties

阅读量:

16

公开/公告号:

US5180470 A

公开/公告日期:

Jan 19, 1993

发明人:

P SmithJC Wittmann

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被引量:

80

摘要:

Broadly the invention is a method for forming a highly-oriented crystal structure on a substrate in a known orientation comprising the steps of forming a film of highly-oriented poly(tetrafluoroethylene) with an orientation angle of less than 20° on a surface of the substrate with its nominal orientation director along a desired orientation director and then depositing a crystal-forming material on the highly-oriented poly(tetrafluoroethylene) to form the structure. Specific examples include a method for growing a highly-oriented crystal on filament substrates, a method for producing extruded polymer articles (fibers, tapes, and solids) containing oriented crystal growth to improve the characteristics thereof, and a method for storing and retrieving data.

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