Organic films deposited on Si p-n junctions: Accurate measurements of fluorescence internal efficiency, and application to luminescent antireflection coatings
摘要:
Ultraviolet (UV) optical pumping followed by fluorescence wavelength downconversion of thin film organic light emitting materials deposited directly on the surface of Sip‐njunction diodes is found to be an accurate and rapid means to determine the film internal fluorescence efficiency. By measuring the photoresponse of the Si detectors in the UV, we find that the organic light emitting films of aluminum tris‐(8‐hydroxyquinoline) (Alq3),N,N′‐diphenyl‐N,N′‐bis‐(3‐methylphenyl)‐ 1,1′‐biphenyl‐4,4′‐diamine, and bis‐(8‐hydroxyquinaldine)‐chlorogallium (Gaq2′Cl), have internal fluorescence efficiencies of 0.30±0.05, 0.35±0.03, and 0.36±0.03, respectively. It has also been found that the organic films can be grown to a thickness which optimizes UV light conversion and can, at the same time, serve as antireflection coatings in the visible spectral region, thereby resulting in enhanced Si photodiode sensitivity extending from the UV to the infrared.
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关键词:
Experimental/ antireflection coatings elemental semiconductors fluorescence optical pumping photodiodes silicon/ p-n junctions fluorescence internal efficiency luminescent antireflection coatings UV optical pumping thin film organic light emitting materials fluorescence wavelength downconversion photoresponse aluminum tris-(8-hydroxyquinoline) N,N'-diphenyl-N,N'-bis-(3-methylphenyl)1,1'-biphenyl-4,4'-diamine bis-(8-hydroxyquinaldine)-chlorogallium photodiode sensitivity semiconductor Si/ A4278H Optical coatings A7855K Photoluminescence in organic materials A7865J Optical properties of nonmetallic thin films B4190F Optical coatings and filters B4250 Photoelectric devices/ Si/int Si /el
DOI:
10.1063/1.363447
被引量:
年份:
1996
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