Single-electron transfer in metallic nanostructures
摘要：
Electrons can be made to pass through a circuit one by one, in nanoscale devices based on the combination of the Coulomb interaction between electrons and their passage by quantum tunnelling through an insulating barrier. Single-electron devices provide a new way of measuring the charge quantum and clarify how electronic signal processing at the molecular level might function.
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关键词：
General or Review/ metal-insulator-metal devices nanotechnology quantum interference devices reviews transistors/ single electron transfer review single electron devices MIM tunnel junction SET metallic nanostructures nanoscale devices Coulomb interaction quantum tunnelling insulating barrier electronic signal processing molecular level/ B2530G Metal-insulator-metal and metal-semiconductor-metal structures B2560 Semiconductor devices
DOI：
10.1038/360547a0
被引量：
年份：
1992
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