Thermal activation of diamond growth in carbon-hydrogen-halogen systems
摘要：
Recent studies of diamond deposition at low temperatures (750-250 °C) with hydrogen-halogen-carbon mixtures indicate that a different diamond growth mechanism is operative in these systems, compared with the atomic hydrogen-methyl radical mechanism which is thought to be responsible for diamond growth in hydrocarbon chemical vapor deposition reactors. As is the case for the hydrocarbon system, the addition of small amounts of oxygen enhances the growth of diamond in the halocarbon systems. Diamond has also been shown to grow without apparent hydrogen in a carbon-sulfur-fluorine system.
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关键词：
ANNULAR MIST FLOW CO2 CORROSION EROSION CORROSION FLOW PERTURBATION MICROTURBULENCES MODELING OF FLOW
DOI：
10.1016/0925-9635(92)90098-9
被引量：
年份：
1992
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