High-mobility pentacene thin-film transistors with copolymer-gate dielectric
摘要：
Pentacene thin-film transistors have been obtained using polymethyl-methacrylate-co-glyciclyl-methacrylate (PMMA–GMA) as the gate dielectric. The optimum active layer thickness in thin-film transistors (OTFTs) was investigated. The present devices show a wide operation voltage range. The on/off current ratio is as high as 10 5. In linear region ( V DS = - 2 V), the field-effect mobility of device increases with the increase in gate field at low-voltage region ( V G < - 20 V), and a mobility of 0.33 cm 2/V s can be obtained when V G > - 20 V. In saturation region, the mobility increases linearly with the gate field, and a high mobility of 1.14 cm 2/V s can be obtained at V G = - 95 V. The influence of voltage on mobility of device was investigated.
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DOI：
10.1016/j.mejo.2006.10.010
被引量：
年份：
2007
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