摘要：

A method for forming a silicon oxide dielectric layer within a microelectronics fabrication. There is first provided a silicon substrate layer employed within a microelectronics fabrication. There is then formed employing the silicon substrate a thermal silicon oxide layer through thermal oxidation of the silicon substrate layer. There is then formed upon the thermal silicon oxide layer a second silicon oxide layer formed through use of a thermal chemical vapor deposition (CVD) method employing ozone as an oxidant and tetraethylorthosilicate (TEOS) as a silicon source material. The thermal chemical vapor deposition (CVD) method also employs a reactor chamber pressure of from about 40 to about 80 torr. The second silicon oxide layer is formed with an attenuated surface sensitivity of the second silicon oxide layer with respect to the thermal silicon oxide layer. The method is particularly desirable when forming trench isolation regions within isolation trenches within silicon semiconductor substrates employed within integrated circuit microelectronics fabrications.

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