摘要：

The transport process in metalorganic chemical vapor deposition (MOCVD) is investigated for a vertical reactor where two kinds of reactants are mixed just above the horizontally-attached substrate. A boundary layer model is developed and the epitaxial growth of the compound semiconductor is described. The model predicts that the growth rate is a function of reactant partial pressure, boundary layer thickness and the degree of mixing. It also predicts that uniformity in thickness is obtained by controling the homogeneity of mixing. Results of experimental studies on ZnSe epitaxial growth rate agree well with the calculated growth rate.

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