Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
申请(专利)号:
US13438093
申请日期:
20120403
公开/公告号:
US08512463B2
公开/公告日期:
20130820
申请(专利权)人:
Kenneth Warren Hang
国省代号:
US
被引量:
摘要:
The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The present invention is also directed to the bismuth-tellurium oxide that is a component of thick film pastes.
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