摘要：

A very rapid method of estimating the effect of gate-edge fluctuation on threshold voltage (V) variability in metal--oxide--semiconductor field-effect transistors (MOSFETs) is proposed. An empirical model is developed, in which correlation width (W) from gate line-width roughness (LWR) is a key parameter of the model. The validity of the model is confirmed using the measured data and an autoregressive model. Wis extracted from the gate line-edge shape depicted in a scanning electron microscope (SEM) image. This method is very useful for the intuitive understanding of the gate-edge fluctuation effect on Vvariability.

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