Plasma enhanced chemical deposition with low vapor pressure compounds
申请(专利)号：
CA19982303260
申请日期：
1998-09-29
公开/公告号：
CA2303260A1
公开/公告日期：
1999-04-08
申请(专利权)人：
BATTELLE MEMORIAL INSTITUTE
被引量：
摘要：
A method for plasma enhanced chemical vapor deposition of low vapor pressure monomeric materials. The method includes making an evaporate by receiving a plurality of monomeric particles of the low vapor pressure monomeric materials as a spray into a flash evaporation housing, evaporating the spray on an evaporation surface, and discharging the evaporate through an evaporation outlet; making a monomer plasma from the evaporate by passing the evaporate proximate a glow discharge electrode; and cryocondensing the monomer plasma onto the substrate as a cryocondensed monomer. The invention also involves a method for making self-curing polymer layers in a vacuum chamber.
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