Thermochemical Vapor Deposition of Diamond in a Carbon-Halogen-Oxygen and/or Sulfur Atmospheric Hot Wall Reactor
摘要：
Previous CVD diamond research and production has been primarily carried out with hydrocarbon-hydrogen-oxygen based systems. In these systems, the hydrogen atom as well as other free radicals, e. g., CH 3 , are formed with hot filaments, plasmas, flames, etc. In most cases, diamond is thought to form with the evolution of H 2 as the final step in the carbon bond formation process. The alternative evolution of HX (where X is a halogen atom), water, and/or some other thermodynamically stable species has been studied in halogen containing systems where formation of these species is suggested as being in part responsible for the lower diamond growth temperatures which are found. The importance of oxygen and/or sulfur in these systems is discussed as additives which enhance the halogen-assisted process. Furthermore, a hydrogen-free mixture of CS 2 and F 2 has been found to produce diamond.
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DOI：
10.1016/B978-0-444-89162-4.50093-2
被引量：
年份：
1991
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