Insulin stimulation of phosphorylation of the beta subunit of the insulin receptor. Formation of both phosphoserine and phosphotyrosine.

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摘要：

Clear experimental and theoretical evidence is presented that k is not conserved and does not need to be conserved when excitons recombine at low temperatures in GaAs quantum wells and superlattices. This surprising effect is due to thermalization and thus localisation of excitons in potential fluctuations. Increasing temperature as well as increasing coupling of wells is found to reestablish the well known k-conservation rule. A complete lineshape theory of excitonic and free electron-hole recombination processes enables one to describe all limiting cases: The spontaneous emission profile for uncoupled and coupled wells from 1.5 K up to room temperature. The 300 K lineshapes of uncoupled and weakly coupled wells are dominated by excitonic emission.

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关键词：

Experimental/ electron-hole recombination excitons gallium arsenide III-V semiconductors luminescence of inorganic solids photoluminescence semiconductor quantum wells semiconductor superlattices/ semiconductor photoluminescence k-conservation quantum wells superlattices excitons thermalization localisation potential fluctuations lineshape theory electron-hole recombination spontaneous emission GaAs/ A7340L Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions A7865J Optical properties of nonmetallic thin films A7855H Photoluminescence in other inorganic materials A7135 Excitons and related phenomena/ GaAs/int As /int Ga/int GaAs/bin As /bin Ga/bin