7C apparatus for forming crystalline films of compounds
公开/公告号：
US4668480 A
公开/公告日期：
05/26/1987
被引量：
摘要：
Two or more crucibles containing different source materials to be vaporized are arranged concentrically, with their mouths open to a vapor chamber defined by an open top envelope within a vacuum housing. The vacuum housing is evacuated while the vapor chamber is held open. Then, with the vapor chamber closed, heat is applied to the crucibles as well as to the envelope to evaporate the source compounds within the crucibles. A substrate is held against the open top of the vapor chamber when the vapor pressure therein rises to a predetermined degree, thereby causing deposition of the vaporized source materials onto the substrate in the form of a crystalline compound film. As required, an impurity evaporator may also be provided within the vacuum housing for doping the compound film. The substrate having the crystalline compound film grown thereon may be moved from over the vapor chamber to a position over the impurity evaporator. As the impurity source is evaporated, the impurity can be controllably added to the compound film by vacuum evaporation.
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